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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
Performance limits of unstrained n-and p-MOSFETs with Si, Ge, GaAs and InAs channel materials are investigated using a 20 band sp 3 d 5 s * -SO semi-empirical atomistic tightbinding model and a top-of-the-barrier seminumerical ballistic transport model. It is observed that although the deeply scaled III-V devices offer very high electron injection velocities, their very low conduction band density-of-states strongly degrades their performance. Due to the high densityof-states for both electronsdoi:10.1109/iedm.2005.1609421 fatcat:hkkdmjk72feprkaigy542rfme4