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Ultra-Low-Threshold GaSb-Based Laser Diodes at 2.65 µm
2009
Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
unpublished
Preserved Fulltext
We present the design and results of a continuous wave room temperature operating GaSb-based edge emitter at 2.65 µm with threshold current densities as low as 50 A/cm² (L →∞).
doi:10.1364/cleo.2009.ctugg5
fatcat:i6lalblipzb5plcvwpjw6i4oja