Ultra-Low-Threshold GaSb-Based Laser Diodes at 2.65 µm

Kaveh Kashani-Shirazi, Alexander Bachmann, Shamsul Arafin, Kristijonas Vizbaras, Markus-Christian Amann
2009 Conference on Lasers and Electro-Optics/International Quantum Electronics Conference   unpublished
We present the design and results of a continuous wave room temperature operating GaSb-based edge emitter at 2.65 µm with threshold current densities as low as 50 A/cm² (L →∞).
doi:10.1364/cleo.2009.ctugg5 fatcat:i6lalblipzb5plcvwpjw6i4oja