C. Vérié, J. F. Rochette, J. P. Rebouillat
1981 Le Journal de Physique Colloques  
New amorphous Si Sn alloys have been prepared using a dc cathodic sputtering technic '-' for 0 < x < 0.12. Routine characterization measurements were performed, leading to establish for the first time the existence of these new amorphous semiconductors. Both the average and optical gaps decrease with increasing Sn content, with the latter extrapolating to 0 at x % 0.5. The high sensibility of a-Si electronic structure to Sn substitution is discussed in the framework of the tight binding
more » ... , stressing the importance of the atomic relativistc corrections.
doi:10.1051/jphyscol:19814147 fatcat:fx5xkqwsyfhyvl3xetqn2hslpe