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Breakdown Characteristics of and Light Emission Observed on Silicon p+-n Junctions
シリコンp+-n接合の降伏特性と発光現象
1963
Oyobuturi
シリコンp+-n接合の降伏特性と発光現象
Preserved Fulltext
An experimental study has been made on the breakdown phenomena observed on alloyed sili con p+-n junctions which have breakdown voltages in the range of 0.5 to 30 volts. When the
doi:10.11470/oubutsu1932.32.120
fatcat:tu6h6itps5hlpjplbr5a4tk3ye