Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth

R. A. Simmons, S. R. Jin, S. J. Sweeney, S. K. Clowes
2015 Applied Physics Letters  
This paper reports on the predicted increase in the Rashba interaction due to the incorporation of Bi in GaAs/AlGaAs heterostructures. Band structure parameters obtained from the band anti-crossing theory have been used in combination with self-consistent Schrödinger-Poisson calculations and k.p models to determine the electron spin-splitting caused by structural inversion asymmetry and increased spin-orbit interaction. A near linear seven fold increase in the strength of the Rashba interaction
more » ... is predicted for a 10% concentration of Bi in a GaAsBi/AlGaAs quantum well heterostructure. Over the past few years the growth of III-V bismide heterostructures has witnessed significant advances due to their potential for improved efficiency in photonic devices in the near infrared region.
doi:10.1063/1.4932122 fatcat:fhmmfplybbflja2gbi7v3fufza