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Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth
Applied Physics Letters
This paper reports on the predicted increase in the Rashba interaction due to the incorporation of Bi in GaAs/AlGaAs heterostructures. Band structure parameters obtained from the band anti-crossing theory have been used in combination with self-consistent Schrödinger-Poisson calculations and k.p models to determine the electron spin-splitting caused by structural inversion asymmetry and increased spin-orbit interaction. A near linear seven fold increase in the strength of the Rashba interactiondoi:10.1063/1.4932122 fatcat:fhmmfplybbflja2gbi7v3fufza