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In this paper, we explore the possibility of using STT-RAM technology to completely replace DRAM in main memory. Our goal is to make STT-RAM performance comparable to DRAM while providing substantial power savings. Towards this goal, we first analyze the performance and energy of STT-RAM, and then identify key optimizations that can be employed to improve its characteristics. Specifically, using partial write and row buffer write bypass, we show that STT-RAM main memory performance and energydoi:10.1109/ispass.2013.6557176 dblp:conf/ispass/KultursayKSM13 fatcat:2xtwhg3cfvhppe5myoupvze6pa