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Electrical characteristics of FinFET with vertically nonuniform source/drain doping profile
2002
IEEE transactions on nanotechnology
The effects of a nonuniform source/drain (S/D) doping profile on the FinFET characteristics are investigated using three-dimensional device simulation. With a fixed S/D doping profile, larger silicon-on-insulator (SOI) thickness can suppress short-channel effects due to the coexistence of longer channel regions. There can be some design margin in the channel thickness due to this reduced short-channel effect. Drain saturation current in FinFET is proportional to the effective device width and
doi:10.1109/tnano.2002.807373
fatcat:puw4vo325bh5pilfhtowdvknee