Reliability assessment of multiple quantum well avalanche photodiodes

I. Yun, H.M. Menkara, Yang Wang, I.H. Oguzman, J. Kolnik, K.F. Brennan, G.S. May, C.J. Summers, B.K. Wagner
1995 33rd IEEE International Reliability Physics Symposium  
I'ne mliabUity of doped-bm'rier AIGaAs/GaAs multi-quantum well avalanche photodiodes fabricated by IVBE is investigated via accelerated life tests. Dark current and breakdown volrage were _ parameters monimreA. The activation energy of the degradation mechanism and median device lifet_ne were determined. Device failure probability as a function of time was computed using the Iognorme.1 model. Analysis using the electron.bexm induced current CEBIC) method revealed the degradation to be caused by
more » ... ion to be caused by ionic impurities or contamination in the pas. sivadon layer.
doi:10.1109/relphy.1995.513675 fatcat:6duiipxfxrhfldtsnaz3rwymue