We report fabrication of reduced graphene oxide (rGO) films using chemical reduction by hydrazine hydrate and rGO paper-like samples using low temperature treatment reduction. Structural analysis confirms the formation of the rGO structure for both samples. Current-voltage (I V) measurements of the rGO film reveal semiconductor behavior with the maximum current value of $3 Â 10 4 A. The current for the rGO paper sample is found to be, at least, one order of magnitude higher. Moreover, bipolar

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... sistance switching, corresponding to memristive behavior of type II, is observed in the I V data of the rGO paper. Although precise values of the rGO film conductivity and the Seebeck coefficient could not be measured, rGO paper shows an electrical conductivity of 6.7 Â 10 2 S/m and Seebeck coefficient of À6 lV/ C. Thus, we demonstrate a simplified way for the fabrication of rGO paper that possesses better and easier measurable macroscopic electrical properties than that of rGO thin film. Published by AIP Publishing. [http://dx.