For the first time, the physical and electrical properties of lead-strontium-titanate ͑PST͒ thin films were prepared by liquid-source misted chemical deposition, and are reported. PST thin films were deposited on a platinum-coated Si wafer. Pb acetate, Sr acetate, and Ti isoproxide were used as metallic precursors. These were dissolved in 2-methoxyethnol. A fine mist of metallic precursor solution was carried into a deposition chamber by Ar carrier gas. The crystallization of PST thin film was

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... chieved by heat treatment above 500°C. The composition and depth profile of PST film, measured by wavelength-dispersive spectroscopy and Auger electron spectroscopy, were uniform. The dielectric constant and dielectric loss of Pb 0.36 Sr 0.64 TiO 3 films of 80 nm thickness were 376 ͑equivalent oxide thickness: 0.83 nm͒ and 0.05, respectively. The electrical properties were improved by postheat treatment under O 2 ambient gas after a top electrode Pt was deposited on a PST thin film. It is concluded that PST can be used as a high-capacity material for ultra-large-scale-integrated dynamic random access capacitors.