Electrical characteristics of (Pb,Sr)TiO[sub 3] thin films for ultra-large-scale-integrated dynamic random access memory capacitors prepared by liquid-source misted chemical deposition

H. J. Chung, S. I. Woo
2001 Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena  
For the first time, the physical and electrical properties of lead-strontium-titanate ͑PST͒ thin films were prepared by liquid-source misted chemical deposition, and are reported. PST thin films were deposited on a platinum-coated Si wafer. Pb acetate, Sr acetate, and Ti isoproxide were used as metallic precursors. These were dissolved in 2-methoxyethnol. A fine mist of metallic precursor solution was carried into a deposition chamber by Ar carrier gas. The crystallization of PST thin film was
more » ... chieved by heat treatment above 500°C. The composition and depth profile of PST film, measured by wavelength-dispersive spectroscopy and Auger electron spectroscopy, were uniform. The dielectric constant and dielectric loss of Pb 0.36 Sr 0.64 TiO 3 films of 80 nm thickness were 376 ͑equivalent oxide thickness: 0.83 nm͒ and 0.05, respectively. The electrical properties were improved by postheat treatment under O 2 ambient gas after a top electrode Pt was deposited on a PST thin film. It is concluded that PST can be used as a high-capacity material for ultra-large-scale-integrated dynamic random access capacitors.
doi:10.1116/1.1333082 fatcat:6dt2ds5bgfhjvnudwlqyixufcu