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Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science
Two InGaN/GaN MQWs samples were grown with two different showerhead gap position 13 and 25 mm, using Thoma Swan CCS-MOCVD system, in order to study the effect of showerhead gap position on the growth of InGaN/GaN MQWs. Through the measurement results, we find that the surface morphology, interface quality, thickness of QB and QW, In composition and PL spectrum of samples are all change significantly. This can attributes to the change of temperature field, flow field and concentration field indoi:10.2991/lemcs-14.2014.263 fatcat:xsbn6lbq7jdpzdwaqxurcqlafq