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Improving the ohmic properties of contacts to P–GaN by adding p–type dopants into the metallization layer
Journal of Electrical Engineering
The work investigates an increase of the density of free charge carriers in the sub-surface region of p-GaN by adding p-type dopants into the Ni-O layer of an Au/Ni-O metallization structure. We have examined electrical properties and concentration depth profiles of contact structures Au/Ni-Mg-O/p-GaN and Au/Ni-Zn-O/p-GaN, thus with magnesium and zinc as p-type dopants. The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with a low concentrationdoi:10.2478/v10187-012-0059-x fatcat:ofp6jzffsndarmw4iw3huxznnq