InGaN/GaN multiple quantum well concentrator solar cells

R. Dahal, J. Li, K. Aryal, J. Y. Lin, H. X. Jiang
2010 Applied Physics Letters  
We present the growth, fabrication, and photovoltaic characteristics of In x Ga 1−x N / GaN͑x ϳ 0.35͒ multiple quantum well solar cells for concentrator applications. The open circuit voltage, short circuit current density, and solar-energy-to-electricity conversion efficiency were found to increase under concentrated sunlight. The overall efficiency increases from 2.95% to 3.03% when solar concentration increases from 1 to 30 suns and could be enhanced by further improving the material quality.
doi:10.1063/1.3481424 fatcat:vbgtm3yogbgenlhesi5wzs3w7i