A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2011; you can also visit the original URL.
The file type is application/pdf.
InGaN/GaN multiple quantum well concentrator solar cells
2010
Applied Physics Letters
Preserved Fulltext
We present the growth, fabrication, and photovoltaic characteristics of In x Ga 1−x N / GaN͑x ϳ 0.35͒ multiple quantum well solar cells for concentrator applications. The open circuit voltage, short circuit current density, and solar-energy-to-electricity conversion efficiency were found to increase under concentrated sunlight. The overall efficiency increases from 2.95% to 3.03% when solar concentration increases from 1 to 30 suns and could be enhanced by further improving the material quality.
doi:10.1063/1.3481424
fatcat:vbgtm3yogbgenlhesi5wzs3w7i