Table of contents

<span title="">2010</span> <i title="IEEE"> 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) </i> &nbsp;
A 125 GHz LC-VCO in a SiGe:C technology dedicated to mmW applications R. Toupé, Y. Deval, J.-B. Bégueret This paper presents a 125GHz LC-VCO dedicated to mmW applications. It has been designed, within the framework of the European project DOTFIVE, with a new B3T bipolar technology developed by STMicroelectronics, in which NPN transistors reach a f t and f max of 260GHz and 340GHz respectively. Under a nominal power supply of 1.8V, the 125GHz VCO dissipates 54mA (with output buffers) for a
more &raquo; ... ed phase noise of -75dBc/Hz at 1MHz offset from the 125GHz carrier and achieves a tuning range of 2GHz with a size of 0.25 mm 2 . A 25 GHz Wide-tuning VCO RFIC Implemented in 0.13 um SiGe BiCMOS Technology (Student) V. Kakani, Y. Jin, F. F. Dai This paper presents the design and measurement of an integrated millimeter wave wideband voltage controlled oscillator (VCO). This VCO employs the on chip transmission lines and hyperabrupt junction varactors to form high Q resonator. The VCO RFIC was implemented in a 0.13um 200GHz ft SiGe hetero-junction bipolar transistor (HBT) BiCMOS technology. The VCO oscillation frequency is around 25GHz, targeting at the ultra wideband (UWB) and short range radar applications. The VCO phase noise was measured around -82.5dBc/Hz at 500 KHz frequency offset. It has a wide tuning range from 23.8GHz to 26.3GHz. The core of VCO circuit consumes 10mA current from a 2.2V power supply and occupies 0.56x0.205mm2 area. An 8-17 GHz SiGe ring oscillator covering the X-and Ku-band for Builtin-Self-Test of multiband system-on-chip solutions is demonstrated. The oscillator features highly linear frequency control over the bandwidth, with 72% tuning range in a small form factor of 0.652 mm 2 . To the author's knowledge, this is the widest tuning range/smallest form factor combination achieved by a ring oscillator that spans both X and Ku bands. A second ring oscillator with band selectivity and output power control is also presented, covering the 9-11 GHz and 17-21 GHz bands. This oscillator features an ultra-small form factor of only 0.036 mm 2 . Both oscillator designs are based on a 3.3 V supply and were implemented in a A comparison of cross-coupled oscillator performance is presented for a high-speed, complementary SiGe (C-SiGe = npn + pnp) BiCMOS platform with matched npn and pnp performance. Results show with all factors held constant, the pnp-only VCO design holds an advantage in white FM phase noise over its npn counterpart at constant current. The reduced noise in the pnp-only VCO is shown to stem from the device's reduced β compared to the npn, which reduces conversion of the thermal noise associated with the base resistance to the output node. The phase noise reduction occurs in a region that reduces the white FM noise of the oscillator, which can have advantages in PLL design. A fully-monolithic 3-element array of coupled voltage-controlled-oscillator (VCO) network was fabricated in a 0.18μm SiGe BiCMOS process for potential use in a Rx/Tx modules. A digitally controlled on-chip passive network was designed and used for controlling the coupling strength across the array VCO units. The operational bandwidth of this core network resides in the S-Band from 1.2GHz to 1.7GHz. The integrated VCO network can be injection-locked via an external RF source to achieve excellent phase noise performance. These characteristics make this coupled-VCO network a very attractive choice for possible use in phased-array radar applications. The chip's total power consumption is 30mW (12mA at 2.5V). High Bitrate Circuits TRAVIS III B. Hecht H. Veenstra Burst-mode Optical Receiver ICs for Broadband Access Networks (Invited) M. Nakamura, S. Nishihara, T. Ito, T. Kurosaki, M. Nogawa, Y. Ohtomo This paper provides an overview of burst-mode optical receiver ICs for broadband access networks. A passive optical network (PON) system is a cost-effective broadband access system whose use has been spreading worldwide. A key device in such a system is an optical receiver IC with a quick response and high sensitivity that realizes high efficiency in data transmission. This paper also reports burst-mode optical receiver ICs fabricated using 0.25-μm SiGe BiCMOS technologies for a 10G-EPON system, which is a promising access network for a next generation PON system. It features fast gain and offset controls for burst-mode operation. The results show that SiGe BiCMOS can provide high performance and
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="">doi:10.1109/bipol.2010.5668095</a> <a target="_blank" rel="external noopener" href="">fatcat:4pe4n4q5lvf5zcnur667hnxcje</a> </span>
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