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Electric field and temperature-induced removal of moisture in nanoporous organosilicate films

N. Biswas, J. A. Lubguban, S. Gangopadhyay
2004 Applied Physics Letters  

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The effects of bias-temperature-stress ͑BTS͒ or simply temperature-stress ͑TS͒ on nanoporous low-k methylsilsesquioxane films are studied. Initially, the as-given and O 2 ashed/etched films exhibit physical adsorption of moisture as revealed from the electrical behavior of the samples after 15 days. The temperature stressing at 170°C volatilized the adsorbed water but is unable to remove chemisorb and hydrophillic Si-OH groups. As a result, the TS films remain susceptible to moisture. BTS at
more » ... °C also removes adsorbed water. More important, the surfaces under the metal-insulator structure were dehydroxylated by breaking the chemisorb Si-OH group facilitating the formation of siloxane bonds that prevents adsorption of moisture even after 60 days.
doi:10.1063/1.1757019 fatcat:uvjyrut725ds5f2jqauyufgasi
Citation

N. Biswas, J. A. Lubguban, S. Gangopadhyay. "Electric field and temperature-induced removal of moisture in nanoporous organosilicate films." Applied Physics Letters 84.21 (2004) 4254-4256