A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL.
The file type is
In 2016, Thach et al. reported figures of merit of the GeSn photodiodes with large mesa sizes of 500 and 250 µm to show the potential of the GeSn materials in short-wave infrared photonics 23 . However, there are only a few discussions about high frequency capabilities of GeSn photodetectors. It is needed to understand the potential of GeSn detectors as high frequency devices. This paper discusses comprehensively about the performance of GeSn photodiodes with 6.44 and 9.24% Sn for highdoi:10.3389/fmats.2019.00278 fatcat:e6msdssbdvgf3hz46oissbnkb4