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ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and itsdoi:10.1115/ipack2019-6453 fatcat:5fpug57wf5bf5iwlreoqknkpfq