Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices

Ramchandra M. Kotecha, Andriy Zakutayev, Wyatt K. Metzger, Paul Paret, Gilberto Moreno, Bidzina Kekelia, Kevin Bennion, Barry Mather, Sreekant Narumanchi, Samuel Kim, Samuel Graham
2019 ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems   unpublished
Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its
more » ... ic and dynamic characteristics. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.
doi:10.1115/ipack2019-6453 fatcat:5fpug57wf5bf5iwlreoqknkpfq