A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is
In this work, a parametric study of a dual junction tandem based on In 0.53 Ga 0.47 N on GaAs has been carried. In order to obtain reflection of unabsorbed photons from the bottom of the device, Bragg reflectors (BR) composed of GaAs/AlAs, with appropriate thicknesses, was placed in the rear surface of the GaAs sub-cell. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell thickness on efficiency hasfatcat:6gcgqkaibjbvnihsqoblj4fzai