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Fabrication of cracking-free CeO2 thin film using UV/O3 and plasma treatment and their applications in wearable devices
[thesis]
2019
Recent development of wearable devices in healthcare, wearable and soft robotics has generated increasing demand for memory devices which are more compact with higher data storage capacity and mechanical flexibility, as well as lower fabrication costs. Resistive random access memory (RRAM), which is an emerging technology, has unique advantage of high response speed, low power consumption, and 3D stack architecture. In this research, a sandwich structure (Au/CeO2/Au/Si) based RRAM device has
doi:10.26190/unsworks/3798
fatcat:zjk2mgan65gs7bklbev4l46sbe