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The temperature dependences of the dc conductivity and thermopower of the bulk amorphous alloy Al 32 Ge 68 were investigated at 6-420 K and at 80-370 K, respectively. The samples were prepared by solid-state amorphization of a quenched crystalline high-pressure phase while heating from 77 to 400 K at ambient pressure. Amorphous Al 32 Ge 68 was found to be a p-type semiconductor with an unusual combination of transport properties. The behaviour of the properties was described semi-quantitativelydoi:10.1088/0953-8984/14/44/458 fatcat:trrtojtc7zauranyw7yu6byjfe