Transport properties of the pressure-induced amorphous semiconductor state of Al32Ge68

V E Antonov, O I Barkalov, A F Gurov, A I Harkunov, A I Kolyubakin
2002 Journal of Physics: Condensed Matter  
The temperature dependences of the dc conductivity and thermopower of the bulk amorphous alloy Al 32 Ge 68 were investigated at 6-420 K and at 80-370 K, respectively. The samples were prepared by solid-state amorphization of a quenched crystalline high-pressure phase while heating from 77 to 400 K at ambient pressure. Amorphous Al 32 Ge 68 was found to be a p-type semiconductor with an unusual combination of transport properties. The behaviour of the properties was described semi-quantitatively
more » ... semi-quantitatively in terms of a modified Mott-Davis model assuming that the Fermi level lies inside the valence band tail.
doi:10.1088/0953-8984/14/44/458 fatcat:trrtojtc7zauranyw7yu6byjfe