Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature

N. A. Sobolev, O. B. Gusev, E. I. Shek, V. I. Vdovin, T. G. Yugova, A. M. Emel'yanov
1998 Applied Physics Letters  
In this work an influence of thermal annealing of Mn-implanted silicon on strain state of silicon matrix is presented. During post-implantation annealing, nanocrystalline tetragonal Mn4Si7 compound is formed. A strong correlation between the size of nanoinclusions and the matrix strain state is detected.
doi:10.1063/1.121593 fatcat:l5etoxmllfacxctto67jm4dxdu