A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is
(Invited) Fabrication of Pure-GaB Ge-on-Si Photodiodes for Well-Controlled 100-pA-Level Dark Currents
The selective epitaxial growth of Ge-on-Si followed by in-situ deposition of a nm-thin Ga/B layer stack (PureGaB) has previously been shown to be a robust CMOS-compatible process for fabrication of Ge-on-Si photodiodes. In this paper, strategies to improve the control and reproducibility of PureGaB Ge-on-Si photodiode fabrication by reducing the local loading effects during the depositions are presented. As compared to the earlier PureGaB devices, the elimination of parasitic Ge and concomitantdoi:10.1149/06406.0737ecst fatcat:xk2x4erlgnbirgyybjbdjosgky