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We are studying ion-irradiation-induced amorphization in Si, Ge, and GaAs using molecular-dynamics simulations. Although high-energy recoils produce defects and amorphous pockets, we show that low-energy recoils ͑about 5-10 eV͒ can lead to a significant component of the athermal recrystallization of preexisting damage. For typical experimental irradiation conditions this recrystallization is, however, not sufficient to fully recrystallize larger amorphous pockets, which grow and induce fulldoi:10.1103/physrevb.65.165329 fatcat:56rgrtlr3zdbpij5sd4x75vdsa