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2014 IEEE International Wireless Symposium (IWS 2014)
Different ESD design topologies suitable for microwave/millimeter wave low-noise amplifiers (LNAs) are reviewed, and the design tradeoffs and limitations of each topology are also discussed. In addition, a V-band LNA using the proposed Pi-type ESD block is demonstrated in 65-nm CMOS. A series ESD inductor together with two shunt ESD diodes and an bonding (probing) pad form a Pi-type network, acting like an ideal wideband 50-ohm transmission line with a loss of only 0.6 dB at 60 GHz. Under adoi:10.1109/ieee-iws.2014.6864242 fatcat:bbxw2uy355g7pp3fplxphqd6fq