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Defects in High-k Gate Dielectric Stacks
High-resolution medium energy ion scattering (MEIS) was used to investigate structure, composition and defects in amorphous and crystalline oxides, and their interface with silicon. Isotopic oxygen reactions were examined in several model high-κ systems, including Hf and Ce oxides, silicates and nitrided silicates as a function of composition, crystallinity and post-deposition annealing conditions. Our results show that for post-growth oxidation of Hf-based films there was extensive O exchangedoi:10.1007/1-4020-4367-8_28 fatcat:e5u2jh7arbbsbca7usxuimkmea