STRUCTURE, COMPOSITION AND ORDER AT INTERFACES OF CRYSTALLINE OXIDES AND OTHER HIGH-K MATERIALS ON SILICON [chapter]

TORGNY GUSTAFSSON, ERIC GARFUNKEL, LYUDMILA GONCHAROVA, DMITRI STARODUB, ROBIN BARNES, MATEUS DALPONTE, GENNADI BERSUKER, BRENDAN FORAN, PAT LYSAGHT, DARRELL G. SCHLOM, VENU VAITHYANATHAN, MINGHWEI HONG (+1 others)
Defects in High-k Gate Dielectric Stacks  
High-resolution medium energy ion scattering (MEIS) was used to investigate structure, composition and defects in amorphous and crystalline oxides, and their interface with silicon. Isotopic oxygen reactions were examined in several model high-κ systems, including Hf and Ce oxides, silicates and nitrided silicates as a function of composition, crystallinity and post-deposition annealing conditions. Our results show that for post-growth oxidation of Hf-based films there was extensive O exchange
more » ... hroughout the film which could be suppressed by the addition of SiO 2 . Under our growth conditions, there was no measurable interfacial SiO 2 formation. In contrast Ce silicates exhibit rapid interface growth under similar oxygen exposures. Epitaxial SrTiO 3 and Sc 2 O 3 films grown by MBE on Si were studied in different channeling geometries. We show that diffusion of Ti and O during SrTiO 3 film growth on Si (001) results in substitution of thin interfacial Sr STRUCTURE, COMPOSITION AND ORDER AT INTERFACES 2 silicide layer used at the initial stages of growth by Ti-or Sr-silicate like interfacial layers depending on the growth condition.
doi:10.1007/1-4020-4367-8_28 fatcat:e5u2jh7arbbsbca7usxuimkmea