Impact of tensile strain on low Sn content GeSn lasing

Denis Rainko, Zoran Ikonic, Anas Elbaz, Nils von den Driesch, Daniela Stange, Etienne Herth, Philippe Boucaud, Moustafa El Kurdi, Detlev Grützmacher, Dan Buca
2019 Scientific Reports  
In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increased defect concentrations and a lower thermal budget regarding processing. In this work we demonstrate strong photoluminescence enhancement in low Sn content Ge 0.94 Sn 0.06 layers by implementing
more » ... le strain. Fitting of the calculated photoluminescence spectra to reproduce our experimental results indicates a strain of ~1.45%, induced via an SiN x stressor layer, which is strong enough to transform the investigated layer into a direct bandgap semiconductor. Moreover, theoretical calculations, using the 8-band k·p model, show the advantages of using low Sn content tensile strained GeSn layers in respect to gain and lasing temperature. We show that low Sn content GeSn alloys have a strong potential to enable efficient room temperature lasers on electronic-photonic integrated circuits.
doi:10.1038/s41598-018-36837-8 fatcat:kjwsmpznczbllo7f74q75du57u