A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL.
The file type is
In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increased defect concentrations and a lower thermal budget regarding processing. In this work we demonstrate strong photoluminescence enhancement in low Sn content Ge 0.94 Sn 0.06 layers by implementingdoi:10.1038/s41598-018-36837-8 fatcat:kjwsmpznczbllo7f74q75du57u