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SCREAM I: A single mask, single-crystal silicon process for microelectromechanical structures
 Proceedings IEEE Micro Electro Mechanical Systems
AbStlWl A single-crystal slhcon, high aspect ratlo, low-temperature process sequence for the fabrlcatlon of suspended rmcroelectromechamcal structures (MEMS) usmg a smgle hthography step and reactwe Ion etching (RIE) IS presented The process IS called SCRJZAM I (single-crystal reactwe etchmg and metalhzatmn) SCREAM I IS a bulk mlcromachmmg process that uses RIE of a s~hcon substrate to fabricate suspended movable smgle-crystal s&on (SCS) beam structures Beam elements wth aspect ratios of 10 todoi:10.1109/memsys.1993.296930 fatcat:num236tmcfforizvh46ck5nywu