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Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization
We investigated the effect of film thickness (geometrical confinement) on the structural evolution of sputtered indium-zinc-tin oxide (IZTO) films as high mobility n-channel semiconducting layers during post-treatment at different annealing temperatures ranging from 350 to 700 °C. Different thicknesses result in IZTO films containing versatile phases, such as amorphous, low-, and high-crystalline structures even after annealing at 700 °C. A 19-nm-thick IZTO film clearly showed a phasedoi:10.1038/s41598-020-76046-w pmid:33139811 fatcat:4e23iqgoxvcydj5ft4ooxri3em