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The effects of total ionizing dose on narrow-channel N-type metal-oxide-semiconductor field-effect-transistors (NMOSFETs) in a 130 nm partially depleted silicon-on-insulator (SOI) technology are presented. The charge conservation principle is utilized to analyze the radiation-induced narrow-channel effect (RINCE). In addition, it is found for the first time, as for as we know that for the narrowchannel NMOSFETs operated in the linear region, the radiation-induced positive charges trapped in thedoi:10.7498/aps.62.076104 fatcat:44r3jsqqnndbpn3vgkfhky53bm