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The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions and AlGaN QW compositions are analyzed. The use of optimized AlGaN-delta-GaN QWs resulted in $7-times increase in material gain over that of conventional AlGaN QWs for gain media emitting at $240 nm. By employing asymmetric AlGaNdelta-GaN QWs, the optimized optical gain can be achievable for AlGaN-delta-GaN QW structure with realistic design applicable for mid-and deep-ultraviolet (UV) lasers. Thedoi:10.1109/jphot.2013.2248705 fatcat:tyuvbgrynngbfd42whmhpklcji