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Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction
2009
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
Preserved Fulltext
Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n-ZnO/͑InGaN/GaN͒ multi-quantum-wells/p-GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n-ZnO are discussed. Successful hybridization of ZnO and ͑In͒GaN into a green light emitting diode was realized.
doi:10.1116/1.3116590
fatcat:4gestcqf5zgzbf6i46z3uiuzty