Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors

Ya-Hsiang Tai, Chun-Yi Chang, Chung-Lun Hsieh, Yung-Hsuan Yang, Wei-Kuang Chao, Huan-Ean Chen
2014 IEEE Electron Device Letters  
In this letter, a noise formula is newly proposed to calculate the low frequency noise for the three kinds of amorphous silicon, low temperature polycrystalline silicon, and amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). It is found that the noise behavior of the TFT depends on its drain current in a simple manner. Based on the analysis, the ratios of drain current to the noise level for these TFTs are compared. It reveals that a-IGZO TFT is the best candidate to be
more » ... sed in the active pixel sensor. Index Terms-Thin-film transistor (TFTs), low frequency noise (LFN), amorphous indium-gallium-zinc oxide (a-IGZO), active pixel sensor (APS).
doi:10.1109/led.2013.2291565 fatcat:kowm542i7vhr3hwofpkcv3weky