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Accuracy of wafer level alignment with substrate conformal imprint lithography
2013
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Alignment with SUSS mask aligner 4" wafer, 20µm process gap 6" wafer, 100µm process gap → Induced shift with 20µm process gap: ~3.1µm → Induced shift with 100µm process gap: ~4.2µm Error magnification: x1000 Page 15 Robert Fader Analytics / Technology © Fraunhofer IISB Results with offset correction Alignment with SUSS mask aligner 4" wafer, 20µm process gap 6" wafer, 100µm process gap → Induced shift can be corrected → Overlay accuracy: 800nm, limited by capabilities of the mask aligner (~1µm stage accuracy) Error magnification: x1000
doi:10.24406/publica-fhg-381114
fatcat:eciqjpwodfhi3nv2odj6eqrdva