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A write-improved low-power 12T SRAM cell for wearable wireless sensor nodes
2018
International journal of circuit theory and applications
In this work, a data-dependent feedback-cutting-based bit-interleaved 12T static random access memory (SRAM) cell is proposed, which enhances the write margin in terms of write trip point (WTP) and write static noise margin (WSNM) by 2.14× and 8.99× whereas read stability in terms of dynamic read noise margin (DRNM) and read static noise margin (RSNM) by 1.06× and 2.6 ×, respectively, for 0.4 V when compared with a conventional 6T SRAM cell. The standby power has also been reduced to 0.93× with
doi:10.1002/cta.2555
fatcat:ogwqmylvznhivecclak7q3nvb4