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The measured photomultiplication and excess noise characteristics of two 4H-SiC p-i-n diodes, with i-region widths of 0.105 µm and 0.285 µm, were modelled using a nonlocal multiplication model to determine the ionization threshold energies and the impact ionization coefficients of 4H-SiC. The modelled ionization coefficients accurately predicted the breakdown voltage of a 0.485 µm p-i-n structure. The breakdown voltage of 4H-SiC calculated using these parameters is approximately 7.2 and 4.6doi:10.4028/www.scientific.net/msf.457-460.1069 fatcat:etuq4b7fvnbybdsn4zvnoy3fii