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Otto-Hahn-Ring 6, 0-8000 Miinchen 83, F.R.G. --The influence of the PBTA (Parasitic Bipolar Transistor Action) induced by impact ionization on the maximum operating voltages as well as on the isolation performance in VLSI CMOS structures was investigated using the sensitivity of the nMOS-and bipolar-parameters to the operating voltages.Strong coupling between the MOS-and bipolar-currents exists due to the potential drop caused by the impact ionization currents of the nMOSFET.The base currentsdoi:10.1051/jphyscol:1988481 fatcat:5u6zl76fgbephkj2um6fqok4g4