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An InGaP/GaAs Resonant-Tunnelling Bipolar Transistor (RTBT) with Multiple Negative-Differential-Resistance (MNDR) Phenomena
2002
32nd European Solid-State Device Research Conference
An InGaP/GaAs resonant tunnelling bipolar transistor (RTBT) with superlattice (SL) in the emitters is fabricated and studied. The modulated widths of SL barriers are utilized in the specific SL structure. Based on the calculations, the ground state and first excited state minibands are estimated from the transmission probability. The electron transport of RT through SL structure is significantly determined by the electric field behaviors across SL barriers. Experimentally, the excellent
doi:10.1109/essderc.2002.194909
fatcat:b4dobgzzybafxb6kky66sosdj4