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Kinetics, Chemical Modeling and Lithography of Novel Acid Amplifiers for Use in EUV Photoresists
2009
Journal of Photopolymer Science and Technology (Fotoporima Konwakai shi)
This paper describes the lithographic properties of eleven acid amplifiers (AAs) and the chemical modeling approach used to predict their thermal stability in an ESCAP polymer resist system at 70 and 110 °C. Specifically, we show how added AAs affect the sensitivity (Eo and Esize), resolution, line edge roughness (LER), exposure latitude, and Z-parameter of ESCAP resists. We found that acid amplifiers that generate fluorinated sulfonic acids give the best combination of sensitivity, LER, and
doi:10.2494/photopolymer.22.43
fatcat:hk7u5qcqabaqhet7m3xb63ywve