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Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells
Physical Review B (Condensed Matter)
The combination of conventional photoluminescence ͑PL͒, PL-excitation ͑PLE͒, and micro-PL spectroscopies is used to study the influence of interface roughness on luminescence properties of thin GaAs/Al 0.3 Ga 0.7 As single quantum wells ͑QWs͒. The QWs were prepared under different growth conditions, resulting in different interface roughness. We discuss the splitting of PL spectra into two ͑or more͒ main lines, the pronounced fine structure of the micro-PL spectra and the low-energy shift ofdoi:10.1103/physrevb.54.2733 pmid:9986125 fatcat:xctkssjd6nfglphuihfxnmzq3y