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Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications
1993
Journal de Physique IV : Proceedings
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Gas-source molecular beam epitaxy growth of Ga,In,-JsyP" layers lattice-matched to GaAs is reported. X-ray diffraction, photoluminescence, and Hall measurements show that the layers are of good quality. High-performance Al-free (In)GaAs(P)l GaJn,-~sP" quantum well lasers, emitting a t 0.8 I h 5 1.1 pm, and GaAs/G~In,~~s"l?" heterojunction diodes are also demonstrated. The results are comparable to those obtained for the best AlGaAs based materials and devices. In particular, we report on the
doi:10.1051/jp4:1993361
fatcat:athhb7zfcbcivfllcutoz3hkxu