A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2011; you can also visit the original URL.
The file type is
Gas-source molecular beam epitaxy growth of GaxIn1-xAsyP1-y on GaAs for photonic and electronic applications
Journal de Physique IV : Proceedings
Gas-source molecular beam epitaxy growth of Ga,In,-JsyP" layers lattice-matched to GaAs is reported. X-ray diffraction, photoluminescence, and Hall measurements show that the layers are of good quality. High-performance Al-free (In)GaAs(P)l GaJn,-~sP" quantum well lasers, emitting a t 0.8 I h 5 1.1 pm, and GaAs/G~In,~~s"l?" heterojunction diodes are also demonstrated. The results are comparable to those obtained for the best AlGaAs based materials and devices. In particular, we report on thedoi:10.1051/jp4:1993361 fatcat:athhb7zfcbcivfllcutoz3hkxu