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2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
In this paper, self-heating of a state-of-the-art SiGe:C BiCMOS Heterojunction Bipolar Transistor (HBT) is studied by means of 3D thermal TCAD simulations. Steady-state, large signal and small signal transient simulations are performed on different device structures to investigate the impact of backend layers on thermal impedance (Z TH ). In addition, the simulation results are verified by DC and low frequency measurements and found to be in excellent agreement.doi:10.1109/sispad.2013.6650606 fatcat:esqekl54jbhlrhvhuog6lwio7m