A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is application/pdf.
Effect of Doping on Ga1-xAlxAs Structural Properties
1997
Acta Physica Polonica. A
Preserved Fulltext
The microstructure of Ga1_ xAlxAs layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher
doi:10.12693/aphyspola.91.911
fatcat:kfeuwwdokrc7feg54wbqpouo4e