Effect of Doping on Ga1-xAlxAs Structural Properties

J. Bąk-Misiuk, J. Domagała, W. Paszkowicz, J. Trela, Z.R. Żytkiewicz, M. Leszczyński, K. Regiński, J. Muszalski, J. Härtwig, M. Ohler
1997 Acta Physica Polonica. A  
The microstructure of Ga1_ xAlxAs layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher
more » ... n for the undoped ones. This phenomenon is attributed to the change of the enharmonic part of lattice vibrations by free electrons or/and point defects.
doi:10.12693/aphyspola.91.911 fatcat:kfeuwwdokrc7feg54wbqpouo4e