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HoSi 3 ,tetragonal, I4/mmm (no. 139), a =7.2047(2) Å, c =10.6861(7) Å, V =554.69(4) Å 3 , Z =8, R(I) =0.034, R(P) =0.038, T =293(2) K. Source of material Holmium trisilicide was prepared by high-pressure hightemperature synthesis. Educt synthesis, sample loading and product isolation from the high-pressure module was performed in argon-filled glove boxes (MBraun; H 2 O, O 2 <0.1 ppm). After arc melting of the rare-earthm etal (Techn. Büro Dr.G . Lamprecht, 99.9 %) with silicon (Alfa Aesar,doi:10.1524/ncrs.2011.0131 fatcat:bylallfuuvaj5lz6uagwqxcwiy