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TiO 3 ͑BST/Cr/BST͒ structure was sputtered sequentially onto Pt/ Ti/ SiO 2 / Si substrate. With the insertion of a 2 nm Cr interlayer, the temperature coefficient of capacitance of the BST/Cr/BST dielectric is about 69% lower than that of BST monolayer dielectric. The dielectric constant and dissipation factor as the function of Cr thickness are studied. X-ray diffraction patterns, the analysis results of energy dispersive spectroscopy, and the survey scan profiles of Auger electrondoi:10.1063/1.2717553 fatcat:zno575ebarhyjpnes7bu63o7vi