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The subsurface structures on top of a 4H-SiC(0001) at two defined thermal graphitization stages, the graphene precursor terminated with (6√3 × 6√3)-R30°periodicity and single-layer graphene (SLG), were characterized by photoelectron holography. The local atomic configuration at the graphene precursor layer and single-layer graphene (SLG) as well as the interface buffer layer were reconstructed. The existence and similarity of local buckling were confirmed on both the precursor and bufferdoi:10.1016/j.susc.2014.11.027 fatcat:ltlkxohuqfcn3pohhsoaq432ea