Stacking registry determination of graphene grown on the SiC(0001) by photoelectron holography

Hirosuke Matsui, Fumihiko Matsui, Naoyuki Maejima, Tomohiro Matsushita, Hiroshi Daimon
2015 Surface Science  
The subsurface structures on top of a 4H-SiC(0001) at two defined thermal graphitization stages, the graphene precursor terminated with (6√3 × 6√3)-R30°periodicity and single-layer graphene (SLG), were characterized by photoelectron holography. The local atomic configuration at the graphene precursor layer and single-layer graphene (SLG) as well as the interface buffer layer were reconstructed. The existence and similarity of local buckling were confirmed on both the precursor and buffer
more » ... The vertical position of SLG seen from the buffer layer was observed with the similar height of graphite: 0.33 ± 0.02 nm. The stacking registry of SLG on the buffer layer was determined to be AB type.
doi:10.1016/j.susc.2014.11.027 fatcat:ltlkxohuqfcn3pohhsoaq432ea