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2015 73rd Annual Device Research Conference (DRC)
Recently, GaN-based high-electron-mobility-transistor (HEMT) has demonstrated its promise in high frequency , high power  and low noise  electronic devices. The lattice matched InAlN/GaN HEMT structure provides a higher 2D electron density than AlGaN/GaN due to a larger bandgap offset and minimized short-channeleffects due to its thinner barrier. However, because of its several-nm thin barrier, those devices usually suffer from high gate leakage and interface trap issues, the devicedoi:10.1109/drc.2015.7175552 fatcat:2qrltppwtjasrhwtsf6pch6sr4