Recently, GaN-based high-electron-mobility-transistor (HEMT) has demonstrated its promise in high frequency [1], high power [2] and low noise [3] electronic devices. The lattice matched InAlN/GaN HEMT structure provides a higher 2D electron density than AlGaN/GaN due to a larger bandgap offset and minimized short-channeleffects due to its thinner barrier. However, because of its several-nm thin barrier, those devices usually suffer from high gate leakage and interface trap issues, the device

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... -state performance is degraded and thereby the off-state breakdown voltage is decreased. Therefore, finding a good method to reduce the gate leakage and interface trap density is of great importance to improve the device off-state performance. In this study, we use atomic layer epitaxial MgCaO as gate dielectric to fabricate sub-100nm InAlN/GaN MOSHEMTs with significantly improved maximum drain current, current on/off ratio and low subthreshold swing.