InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate dielectric

Hong Zhou, Xiabing Lou, Heng Wu, Sami Alghamdi, Shiping Guo, R. G. Gordon, Peide D. Ye
2015 2015 73rd Annual Device Research Conference (DRC)  
Recently, GaN-based high-electron-mobility-transistor (HEMT) has demonstrated its promise in high frequency [1], high power [2] and low noise [3] electronic devices. The lattice matched InAlN/GaN HEMT structure provides a higher 2D electron density than AlGaN/GaN due to a larger bandgap offset and minimized short-channeleffects due to its thinner barrier. However, because of its several-nm thin barrier, those devices usually suffer from high gate leakage and interface trap issues, the device
more » ... -state performance is degraded and thereby the off-state breakdown voltage is decreased. Therefore, finding a good method to reduce the gate leakage and interface trap density is of great importance to improve the device off-state performance. In this study, we use atomic layer epitaxial MgCaO as gate dielectric to fabricate sub-100nm InAlN/GaN MOSHEMTs with significantly improved maximum drain current, current on/off ratio and low subthreshold swing.
doi:10.1109/drc.2015.7175552 fatcat:2qrltppwtjasrhwtsf6pch6sr4