A ballistic pn junction in suspended graphene with split bottom gates

Anya L. Grushina, Dong-Keun Ki, Alberto F. Morpurgo
2013 Applied Physics Letters  
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as a function of gate voltage, magnetic field, bias, and temperature exhibit characteristic Fabry-Perot oscillations in the cavities formed by the pn junction and each of the contacts, with transport occurring in the ballistic regime. Our results demonstrate the
more » ... possibility to achieve a high degree of control on the local electronic properties of ultra-clean suspended graphene layers, a key aspect for the realization of new graphene nanostructures.
doi:10.1063/1.4807888 fatcat:zltsgk3lgvdu3bor7xepgl2afq