Scanning probe microscopy

M.E. Welland, A.W. McKinnon, J.R. Barnes, S.J. O'Shea
1992 Engineering Science and Education Journal  
We review recently reported scanned-probe capacitance measurements of electrons entering silicon donors in a gallium-arsenide heterostructure. Single-electron peaks were observed in the capacitanceversus-voltage curves. The precise voltage position of the peaks varied with the location of the probe, reflecting a random distribution of silicon within the donor plane. In addition, three broader capacitance peaks were observed independent of the probe location, indicating clusters of electrons
more » ... rs of electrons entering the system at approximately the same voltages. These broad peaks are consistent with the addition energy spectrum of donor molecules, effectively formed by nearest-neighbor pairs of silicon donors.
doi:10.1049/esej:19920042 fatcat:3fnuxck6anfivcpl4ecwpjr6aa