Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy

R.L. Kosut, R. Caflisch, M. Gyure, D.G. Meyer, A. Engelmann
Proceedings of the 38th IEEE Conference on Decision and Control (Cat. No.99CH36304)  
Epitaxial Growth Models This paper addresses the modeling and control of epitaxial growth of III-V semiconductor material by Molecular Beam Epitaxy. To reliably achieve the required features, processing must use fundamental understanding of the atom-by-atom assembly of these structures and careful feedback design. One problem is to develop a model relating morphology, sensor variables, and control variables. Another is to design robust feedback for achieving a desired surface morphology. A
more » ... morphology. A novel new model is developed and presented here as well as modifications to a previously published model. Feedback design using both models is conducted; simulation results are shown.
doi:10.1109/cdc.1999.828021 fatcat:tsdo3h7pfjgotmylla2tgyy5be