Bias Temperature Instabilities for Low-Temperature Polycrystalline Silicon Complementary Thin-Film Transistors

Chih-Yang Chen, Jam-Wem Lee, Ming-Wen Ma, Wei-Cheng Chen, Hsiao-Yi Lin, Kuan-Lin Yeh, Shen-De Wang, Tan-Fu Lei
2007 Journal of the Electrochemical Society  
The degradation mechanisms of both negative bias temperature instability ͑NBTI͒ and positive bias temperature instability ͑PBTI͒ were studied for low-temperature polycrystalline silicon complementary thin-film transistors. Measurements show that both NBTI and PBTI are highly bias dependent; however, the effect of the temperature is only functional on the NBTI stress. Furthermore, instead of interfacial trap-state generation during the NBTI stress, the PBTI stress passivates the interface trap
more » ... ates. We conclude that the diffusion-controlled electrochemical reactions dominate the NBTI degradation while charge trapping in the gate dielectric controls the PBTI degradation.
doi:10.1149/1.2742810 fatcat:dkbqyyojejdyjk3tjlpbsspw6m